r07ds0258ej0200 rev.2.00 page 1 of 6 aug 07, 2013 preliminary datasheet bcr08ds-14a 700v-0.8a-triac low power use features ? i t (rms) : 0.8 a ? v drm :700 v ? i fgti , i rgti , i rgtiii : 5 ma or 10ma ? ivmode trigger is available (#b12) ? planar passivation type ? surface mounted type ? completed pb free outline renesas package code: prsp0004za-a (package name: sot-223) 4 1 2 3 2, 4 1 3 1. t 1 terminal 2. t 2 terminal 3. gate terminal 4. t 2 terminal applications washing machine, electric fan, air cleaner, other general purpose control applications maximum ratings parameter symbol voltage class unit 14 repetitive peak off-state voltage note1 v drm 700 v non- repetitive peak off-state voltage note1 v dsm 840 v notes: 1. gate open. parameter symbol ratings unit conditions rms on-state current i t (rms) 0.8 a commercial frequency, sine full wave 360 conduction, tc= 96c note3 surge on-state current i tsm 8 a 60hz sinewave 1 full cycle, peak value, non-repetitive i 2 t for fusing i 2 t 0.26 a 2 s value corresponding to 1 cycle of half wave 60hz, surge on-state current peak gate power dissipation p gm 1 w average gate power dissipation p g (av) 0.1 w peak gate voltage v gm 6 v peak gate current i gm 0.5 a junction temperature tj ? 40 to +125 c storage temperature tstg ? 40 to +125 c mass ? 0.12 g typical value r07ds0258ej0200 rev.2.00 a ug 07, 2013
bcr08ds-14a preliminary r07ds0258ej0200 rev.2.00 page 2 of6 aug 07, 2013 electrical characteristics parameter symbol bcr08ds-14a#b10 bcr08ds-14a#b12 unit test conditions min. typ. max. min. typ. max. repetitive peak off-state current i drm ? ? 1.0 ? ? 1.0 ma tj = 125 c v drm applied on-state voltage v tm ? ? 2.0 ? ? 2.0 v tc = 25 c, i tm =1.2 a instantaneous measurement gate trigger voltage note2 v fgt ? ? 2.0 ? ? 2.0 v tj = 25 c, v d = 6 v r l = 6 , r g = 330 ? v rgt ? ? 2.0 ? ? 2.0 v ?? v rgt ?? ? ? 2.0 ? ? 2.0 v iv v fgt ?? ? ? ? ? ? 2.0 v gate trigger current note2 i fgt ? ? 5 ? ? 10 ma tj = 25 c, v d = 6 v r l = 6 , r g = 330 ? i rgt ? ? 5 ? ? 10 ma ?? i rgt ?? ? ? 5 ? ? 10 ma iv i fgt ?? ? ? ? ? ? 10 ma gate non-trigger voltage v gd 0.2 ? ? 0.2 ? ? v tj = 125 c v d = 1/2 v drm thermal resistance r th (j-c) ? ? 25 ? ? 25 c/w junction to case n o t e 3 critical-rate of rise of off- state commutating voltage note4 (dv/dt)c 0.5 ? ? 0.5 ? ? v/ s tj = 125 c critical-rate of rise of off- state voltage note5 dv/dt 200 ? ? 200 ? ? v/ s tj = 125 c notes: 2. measurement usi ng the gate trigger characteristics measurement circuit. 3. case temperature is measured on the t 2 tab. 4. test conditions of the critical-rate of rise of off-state commutating voltage are shown in the table below. test conditions commutating voltage and current waveforms (inductive load) 1. junction temperature tj = 125c 2. rate of decay of on-state commutating current (di/dt)c = ? 0.4 a/ms 3. peak off-state voltage v d = 400 v supply voltage time time time main current main voltage (di/dt)c v d (dv/dt)c 5. test conditions of the critical-rate of rise of off-state voltage are shown in the table below. test conditions off-state voltage waveforms 1. junction temperature tj = 125c 2. off-state voltage waveform linear waveform 3. peak off-state voltage v d = 200 v 4. gate open dv/dt=0.8v d /(t 2 - t 1 )
bcr08ds-14a preliminary r07ds0258ej0200 rev.2.00 page 3 of6 aug 07, 2013 performance curves 10 3 10 2 10 1 ?40 0 40 80 120 160 maximum on-state characteristics on-state voltage (v) on-state current (a) rated surge on-state current conduction time (cycles at 60hz) surge on-state current (a) gate characteristics gate current (ma) gate voltage (v) gate trigger voltage vs. junction temperature junction temperature (c) gate trigger voltage (tj = tc) gate trigger voltage (tj = 25c) 100 (%) maximum transient thermal impedance characteristics (junction to case) conduction time (cycles at 60hz) transient thermal impedance (c/w) 4.0 1.5 2.5 3.5 1.0 2.0 3.0 10 1 10 0 10 ? 1 10 0 2 6 8 4 10 0 10 1 10 2 typical example 10 1 10 0 10 ? 1 10 1 10 2 10 1 10 0 10 ? 1 10 3 10 4 10 2 10 2 10 3 p gm = 1w i gm = 0.5a v gm = 6v v gt = 2v i fgt i , i rgt i , i rgt iii 0 5 15 20 25 30 tj = 25c v gd = 0.2v p g(av) = 0.1w 10 gate trigger current vs. junction temperature junction temperature (c) gate trigger current (tj = tc) gate trigger current (tj = 25c) 100 (%) 10 3 10 2 10 1 ?40 0 40 80 120 160 typical example ifgt iii ifgt i ,irgt i,irgtiii vd=6v rl=6
bcr08ds-14a preliminary r07ds0258ej0200 rev.2.00 page 4 of6 aug 07, 2013 on-state power dissipation (w) rms on-state current (a) maximum on-state power dissipation rms on-state current (a) case temperature (c) allowable case temperature vs. rms on-state current junction temperature (c) repetitive peak off-state current (tj = tc) repetitive peak off-state current (tj = 25c) 100 (%) repetitive peak off-state current vs. junction temperature holding current vs. junction temperature junction temperature (c) holding current (tj = tc) holding current (tj = 25c) 100 (%) 0 0.4 1.2 1.6 2.0 0.8 00.20.4 0.8 1.2 0.6 1.0 1.4 10 3 10 2 10 1 ?40 0 40 80 120 160 ?40 0 40 80 120 160 10 2 10 5 10 4 10 3 0 0.2 0.4 0.6 0.8 1.0 0 20 40 80 60 100 120 140 160 typical example typical example breakover voltage vs. junction temperature junction temperature (c) breakover voltage (tj = tc) breakover voltage (tj = 25c) 100 (%) 0 20 40 80 60 100 120 140 160 ?40 0 40 80 120 160 typical example 360 conduction resistive, inductive loads 360 conduction resistive, inductive loads curves apply regardless of conduction angle latching current (ma) latching current vs. junction temperature junction temperature (c) ?40 0 40 80 120 160 t 2 + , g ? typical example distribution 10 2 10 0 10 1 10 ? 1 typical example t 2 ? , g ? t 2 + , g + t 2 ? , g +
bcr08ds-14a preliminary r07ds0258ej0200 rev.2.00 page 5 of6 aug 07, 2013 rate of rise of off-state voltage (v/ s) breakover voltage (dv/dt = xv/ s) breakover voltage (dv/dt = 1v/ s) 100 (%) breakover voltage vs. rate of rise of off-state voltage 10 1 10 2 10 0 10 3 0 20 40 80 60 100 120 160 140 typical example tj = 125c commutation characteristics (tj=125c) critical rate of rise of off-state commutating voltage (v/ s) rate of decay of on-state commutating current (a/ms) 10 0 10 ? 1 10 1 10 ? 1 10 0 10 1 conditions v d = 200v i t = 1a = 500 s tj = 125 c typical example i quadrant iii quadrant minimum characteristics value i quadrant iii quadrant test procedure i test procedure iii test procedure iv test procedure ii gate trigger characteristics test circuits 6 6 6 6 6v 6v 6v 6v 330 330 330 330 a v a v a v a v 10 1 10 0 10 2 gate trigger current vs. gate current pulse width gate current pulse width ( s) gate trigger current (tw) gate trigger current (dc) 100 (%) 10 3 10 2 10 1 typical example i rgt iii i fgt i i fgt iii i rgt i
bcr08ds-14a preliminary r07ds0258ej0200 rev.2.00 page 6 of6 aug 07, 2013 package dimensions 6.6 0.1 7.0 0.3 1.0 0.2 3.5 0.2 1.75 1.75 3.0 0.1 0.33 0.1 0.33 0.1 0.05 0.05 1.8 max. 0.74 0.1 2.3 0.1 unit: mm ? ? ordering information orderable part number packing quantity remark bcr08ds-14at13#b10 embossed tape 3000 pcs. taping direction ?t1? bcr08ds-14at13#b12 embossed tape 3000 pcs. taping direction ?t1? note : please confirm the specificat ion about the shipping in detail.
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